Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact
Identifieur interne : 000197 ( Main/Exploration ); précédent : 000196; suivant : 000198Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact
Auteurs : Khalid Hoummada [France] ; Gamra Tellouche [Algérie] ; Ivan Blum [France] ; Alain Portavoce [France] ; Marion Descoins [France] ; Dominique Mangelinck [France]Source :
- Microelectronic engineering [ 0167-9317 ] ; 2013.
Descripteurs français
- Pascal (Inist)
- Décoration dislocation, Agrégation, Classification automatique, Addition arsenic, Microscopie électronique transmission, Sonde atomique, Tomographie, In situ, Diffraction RX, Boucle dislocation, Pastille électronique, Recristallisation, Traitement thermique, Distribution concentration, Profil profondeur, Dislocation coin, Phénomène transitoire, Implantation, Diffusion(transport), Ségrégation, Nickel, Silicium, Arsenic, Siliciure de nickel, Couche mince, Interface, Matériau dopé, 6630P, 66.
- Wicri :
- topic : Nickel.
English descriptors
- KwdEn :
- Aggregation, Arsenic, Arsenic additions, Atom probe, Automatic classification, Concentration distribution, Depth profiles, Diffusion, Dislocation décoration, Dislocation loops, Doped materials, Edge dislocations, Heat treatments, Implantation, In situ, Interfaces, Nickel, Nickel silicide, Recrystallization, Segregation, Silicon, Thin films, Tomography, Transients, Transmission electron microscopy, Wafers, XRD.
Abstract
The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As+-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni2Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties.
Affiliations:
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Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Direct observation of Ni decorated dislocation loops within As<sup>+</sup>-implanted silicon and arsenic clustering in Ni silicide contact</title><author><name sortKey="Hoummada, Khalid" sort="Hoummada, Khalid" uniqKey="Hoummada K" first="Khalid" last="Hoummada">Khalid Hoummada</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Tellouche, Gamra" sort="Tellouche, Gamra" uniqKey="Tellouche G" first="Gamra" last="Tellouche">Gamra Tellouche</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de Physique, faculté des sciences, Université de M'sila</s1><s2>M'sila 28000</s2><s3>DZA</s3><sZ>2 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>M'sila 28000</wicri:noRegion></affiliation></author><author><name sortKey="Blum, Ivan" sort="Blum, Ivan" uniqKey="Blum I" first="Ivan" last="Blum">Ivan Blum</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Portavoce, Alain" sort="Portavoce, Alain" uniqKey="Portavoce A" first="Alain" last="Portavoce">Alain Portavoce</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Descoins, Marion" sort="Descoins, Marion" uniqKey="Descoins M" first="Marion" last="Descoins">Marion Descoins</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Mangelinck, Dominique" sort="Mangelinck, Dominique" uniqKey="Mangelinck D" first="Dominique" last="Mangelinck">Dominique Mangelinck</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">13-0188468</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0188468 INIST</idno><idno type="RBID">Pascal:13-0188468</idno><idno type="wicri:Area/PascalFrancis/Corpus">000065</idno><idno type="wicri:Area/PascalFrancis/Curation">000376</idno><idno type="wicri:Area/PascalFrancis/Checkpoint">000061</idno><idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000061</idno><idno type="wicri:doubleKey">0167-9317:2013:Hoummada K:direct:observation:of</idno><idno type="wicri:Area/Main/Merge">000200</idno><idno type="wicri:Area/Main/Curation">000197</idno><idno type="wicri:Area/Main/Exploration">000197</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Direct observation of Ni decorated dislocation loops within As<sup>+</sup>-implanted silicon and arsenic clustering in Ni silicide contact</title><author><name sortKey="Hoummada, Khalid" sort="Hoummada, Khalid" uniqKey="Hoummada K" first="Khalid" last="Hoummada">Khalid Hoummada</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Tellouche, Gamra" sort="Tellouche, Gamra" uniqKey="Tellouche G" first="Gamra" last="Tellouche">Gamra Tellouche</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de Physique, faculté des sciences, Université de M'sila</s1><s2>M'sila 28000</s2><s3>DZA</s3><sZ>2 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>M'sila 28000</wicri:noRegion></affiliation></author><author><name sortKey="Blum, Ivan" sort="Blum, Ivan" uniqKey="Blum I" first="Ivan" last="Blum">Ivan Blum</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Portavoce, Alain" sort="Portavoce, Alain" uniqKey="Portavoce A" first="Alain" last="Portavoce">Alain Portavoce</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Descoins, Marion" sort="Descoins, Marion" uniqKey="Descoins M" first="Marion" last="Descoins">Marion Descoins</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author><author><name sortKey="Mangelinck, Dominique" sort="Mangelinck, Dominique" uniqKey="Mangelinck D" first="Dominique" last="Mangelinck">Dominique Mangelinck</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1><s2>13397 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName></affiliation></author></analytic><series><title level="j" type="main">Microelectronic engineering</title><title level="j" type="abbreviated">Microelectron. eng.</title><idno type="ISSN">0167-9317</idno><imprint><date when="2013">2013</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Microelectronic engineering</title><title level="j" type="abbreviated">Microelectron. eng.</title><idno type="ISSN">0167-9317</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aggregation</term><term>Arsenic</term><term>Arsenic additions</term><term>Atom probe</term><term>Automatic classification</term><term>Concentration distribution</term><term>Depth profiles</term><term>Diffusion</term><term>Dislocation décoration</term><term>Dislocation loops</term><term>Doped materials</term><term>Edge dislocations</term><term>Heat treatments</term><term>Implantation</term><term>In situ</term><term>Interfaces</term><term>Nickel</term><term>Nickel silicide</term><term>Recrystallization</term><term>Segregation</term><term>Silicon</term><term>Thin films</term><term>Tomography</term><term>Transients</term><term>Transmission electron microscopy</term><term>Wafers</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Décoration dislocation</term><term>Agrégation</term><term>Classification automatique</term><term>Addition arsenic</term><term>Microscopie électronique transmission</term><term>Sonde atomique</term><term>Tomographie</term><term>In situ</term><term>Diffraction RX</term><term>Boucle dislocation</term><term>Pastille électronique</term><term>Recristallisation</term><term>Traitement thermique</term><term>Distribution concentration</term><term>Profil profondeur</term><term>Dislocation coin</term><term>Phénomène transitoire</term><term>Implantation</term><term>Diffusion(transport)</term><term>Ségrégation</term><term>Nickel</term><term>Silicium</term><term>Arsenic</term><term>Siliciure de nickel</term><term>Couche mince</term><term>Interface</term><term>Matériau dopé</term><term>6630P</term><term>66</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As<sup>+</sup>-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni<sub>2</sub>Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties.</div></front></TEI><affiliations><list><country><li>Algérie</li><li>France</li></country><region><li>Provence-Alpes-Côte d'Azur</li></region><settlement><li>Marseille</li></settlement></list><tree><country name="France"><region name="Provence-Alpes-Côte d'Azur"><name sortKey="Hoummada, Khalid" sort="Hoummada, Khalid" uniqKey="Hoummada K" first="Khalid" last="Hoummada">Khalid Hoummada</name></region><name sortKey="Blum, Ivan" sort="Blum, Ivan" uniqKey="Blum I" first="Ivan" last="Blum">Ivan Blum</name><name sortKey="Descoins, Marion" sort="Descoins, Marion" uniqKey="Descoins M" first="Marion" last="Descoins">Marion Descoins</name><name sortKey="Mangelinck, Dominique" sort="Mangelinck, Dominique" uniqKey="Mangelinck D" first="Dominique" last="Mangelinck">Dominique Mangelinck</name><name sortKey="Portavoce, Alain" sort="Portavoce, Alain" uniqKey="Portavoce A" first="Alain" last="Portavoce">Alain Portavoce</name></country><country name="Algérie"><noRegion><name sortKey="Tellouche, Gamra" sort="Tellouche, Gamra" uniqKey="Tellouche G" first="Gamra" last="Tellouche">Gamra Tellouche</name></noRegion></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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